| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Research Abstract |
Various techniques to prepare thin films have been reported during the decades. However, most of them basically require a high substrate temperature and/or a vacuum process. A novel thin film synthesis technique at low substrate temperature under ambient pressure should be developed. We focused on a coplanar surface discharge technique to meet the demand. Coplanar surface discharge is categorized to a dielectric barrier discharge in which high-energy plasma runs on the surface of an insulating substrate. In this study, we developed a coplanar surface discharge technique to prepare zinc oxide films.
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