Control of embedded Si nanocrystals in SiO2 by ion and laser beams
| Project/Area Number |
22604002
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Quantum beam science
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| Research Institution | Aichi University of Education |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | イオン・レーザービーム / シリコンナノ結晶 / 光機能デバイス / 量子効果 / 量子ビーム / イオンビーム / エキシマランプ / 量子ドット / シリコン / ナノ材料 / 可視発光 / イオン注入 / 半導体ナノ結晶 / ナノ結晶 / 急速加熱 / 紫外線照射 |
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| Research Abstract |
In this work, the potentialities of excimer UV-light irradiation and rapid thermal annealing to enhance the photoluminescence and to achieve low temperature formation of Si nanocrystals have been investigated. The implanted samples were subsequently irradiated with an excimer-UV lamp. After the process, the samples were rapidly thermal annealed before furnace annealing. We found that the luminescence intensity is strongly enhanced with excimer-UV irradiation and RTA.
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Report
(4 results)
Research Products
(15 results)
