| Project/Area Number |
22651056
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
WATANABE Kenji 独立行政法人物質・材料研究機構, 光・電子材料ユニット, 主幹研究員 (20343840)
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| Co-Investigator(Renkei-kenkyūsha) |
TANIGUCHI Takashi 独立行政法人物質・材料研究機構, 先端材料プロセスユニット, グループリーダー (80354413)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,490,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | 六方晶窒化ホウ素 / グラフェン / hBNナノシート / 構造評価 / ラマン散乱分光法 / エキシトン発光 / 電子状態 / ラマン散乱 / 電子特性 / 反射率測定 / 層数評価 |
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| Research Abstract |
Excitonic luminescence of hexagonal boron nitride(hBN) single-crystal was studied, and found that the origin of the 220 nm band is different from that of the 215 nm self-trapped and the 227 nm bound exciton luminous bands BN mono-and bilayers can be prepared and identified on top of an oxidized Si wafer using a mechanical exfoliation technique and the use of thinner SiO_2 and/or narrow optical filters makes it possible to see even BN monolayers.
By using hBN for the substrate of graphene, the electrical conduction properties of the graphene improved significantly, and its mobility reached almost one-order higher than that of the conventional SiO_2 substrate device.
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