| Budget Amount *help |
¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000)
Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2012: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2011: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
Fiscal Year 2010: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
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| Research Abstract |
We have successfully established the fabrication procedure of III-V-on-Insulator (III-V-OI) wafers by using the direct wafer bonding technology. As a result, we have demonstrated high-performance optical switches/modulators and waveguide photodetectors on the III-V-OI wafer in addiction to InP-based photonic-wire passive devices. We have also established the fabrication procedure of InGaAs MOS transistors on the III-V-OI wafer.
Thus, we have successfully demonstrated the basic concept of the III-V CMOS photonics platform on which ultra-small III-V-based photonic-wire devices and high-performance III-V-based CMOS transistors can be co-integrated by using the III-V-OI wafer.
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