Self-assembly of highly symmetric quantum dots on GaAs(111)
| Project/Area Number |
22710107
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Nanomaterials/Nanobioscience
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
MANO Takaaki 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
|
|---|
| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
|
|---|
| Keywords | 量子ドット / ガリウム砒素 / もつれ合い光子 / 自己形成 / 量子情報 / 液滴 / もつれあい光子 / GaAs |
|---|
| Research Abstract |
Great suppression of fine-structure splitting(FSS) is demonstrated in self-assembled GaAs quantum dots(QDs) grown on AlGaAs(111) A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than 20μeV, a substantial reduction from that of QDs grown on(100).
|
Report
(3 results)
Research Products
(44 results)
-
-
-
-
-
-
-
-
-
-
[Journal Article] Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots2011
Author(s)
G. Sallen, B. Urbaszek, M. M. Glazov, E. L. Ivchenko, T. Kuroda, T. Mano, S. Kunz, M. Abbarchi, K. Sakoda, D. Lagarde, A. Balocchi, X. Marie, and T. Amand
-
Journal Title
Phys. Rev. Lett
Volume: 107
Issue: 16
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
