Study of interface passivation effect on band alignment at metal/semiconductor interface
| Project/Area Number |
22760244
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | 電子デバイス・集積回路 / フェルミレベルピンニング |
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| Research Abstract |
The pinning level at metal/Ge interface is sensitive to the non metal element bonded to interface Ge and to the bond structure of Ge close to the interface. Whereas, the alleviation of Fermi level pinning depends on the inserting film, which is difficult to be explained only by simple models of interface level or by wave function penetration from metal.
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Report
(3 results)
Research Products
(14 results)
