Terahertz oscillating resonant tunneling diode having beam shaping function using three-dimensionally integrated antenna structure
| Project/Area Number |
22760247
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
SUZUKI Safumi 東京工業大学, 総合理工学研究科, 助教 (40550471)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 電子デバイス / 集積回路 / 超高速電子デバイス / テラヘルツ / 超高速デバイス / 量子エレクトロニクス |
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| Research Abstract |
Terahertz oscillating resonant tunneling diode with three-dimensionally integrated micro size Yagi antenna array was proposed. The radiation pattern was calculated and fabrication process was studied. A high antenna gain of around 19 dBi was theoretically expected in the RTD oscillator integrated with three element Yagi antenna array. The conditions for fabrication of thin substrate and thick dielectric layer were experimentally studied.
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Report
(3 results)
Research Products
(96 results)
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[Journal Article] Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology,高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現2011
Author(s)
H. Sugiyama, S. Suzuki, and M. Asada, 杉山弘樹, 鈴木左文, 浅田雅洋
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Journal Title
NTTTechnical Review, NTT技術ジャーナル
Volume: vol.9, no.10, vol.23, no.7
Pages: 12-17
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