| Project/Area Number |
22K04928
|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Multi-year Fund |
| Section | 一般 |
| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
|
| Research Institution | Kyushu University |
Principal Investigator |
|
| Project Period (FY) |
2022-04-01 – 2025-03-31
|
| Project Status |
Completed (Fiscal Year 2024)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2024: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2023: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2022: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
| Keywords | 二次元物質 / 強磁性表面 / スピン偏極光電子 / ボロフェン / ホウ素薄膜 / スピン依存電子伝導 / 光電子分光 |
| Outline of Research at the Start |
二次元原子層の高い電子移動度と強磁性薄膜のスピン偏極を組み合わせたデバイスは次世 代電子材料の有力候補である。グラフェンを用いた研究が多くなされているが、本研究ではホウ素薄膜をニッケルなどの強磁性薄膜上に作製し、その電子スピンに依存した電気伝導を光電子分光法により明らかにする。
|
| Outline of Final Research Achievements |
Boron thin films were grown on single-crystal nickel surfaces and their crystal structures were determined from electron diffraction and first-principles calculations. The same structure was also successfully prepared for a thin nickel film sample grown on a heavy metal tungsten surface. A circular dichoic photoelectron emission measurement was also conducted using deep-ultraviolet light at a wavelength of 250 nm as an excitation source. The spin-polarised electrons produced by circularly polarised excitation of heavy metals were used to elucidate the effect of boron thin films on the polarisation of magnetic thin films. At present, magnetic circular dichroism from nickel thin films can be observed and spin polarisation measurements can be made. However, the effect of the boron thin film on to the spin polarization has not yet been detected. Further researchs will be continued in order to investigate the physical properties of the boron thin film as a spin filter.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究では次世代磁気デバイスの基盤技術として、磁性薄膜と二次元原子層の原子レベルでの層状構造を作製し、その結晶構造を解析した。また、この層状構造の磁気特性を研究するために、新規の磁気円二色性光電子放出装置を構築し、スピン光電子の偏極度が二次元原子層によりどのように変化するのか測定することを目指した。二次元原子層の効果は未検出であるが、本研究成果は原子レベルの微細構造における磁気デバイスの高度化に寄与する。
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