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Development of GaN superjunction devices with pGaN ArF laser activation for high power application

Research Project

Project/Area Number 22K20438
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeMulti-year Fund
Review Section 0302:Electrical and electronic engineering and related fields
Research InstitutionToyota Technological Institute

Principal Investigator

VILLAMIN MARIAEMMA  豊田工業大学, 工学(系)研究科(研究院), ポストドクトラル研究員 (00960874)

Project Period (FY) 2022-08-31 – 2025-03-31
Project Status Granted (Fiscal Year 2023)
Budget Amount *help
¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2023: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2022: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
KeywordsGaN / Laser activation / excimer laser / ArF activation annealing / Mg doped GaN / ArF excimer laser / Laser annealing / GaN superjunction
Outline of Research at the Start

The goal of this proposal is to realize Gallium nitride superjunction (GaN SJ) power device with p-GaN layer activated using an ArF laser for the first time. GaN SJ device is a candidate for next generation power devices. However, SJ structure fabrication is very difficult, due to the alternating p- and n- layers needed. Although the alternating n- and p- SJ structure can be achieved by selective ion implantation, a more elegant approach is to use selective ArF excimer laser annealing which can define the p-GaN region by laser irradiation. This will be the first realization of this technique.

Outline of Annual Research Achievements

Main goal is to realize GaN SJ device with p-GaN region selectively activated via ArF laser. This will be an original proof of concept for SJ structure fabrication that is difficult to make due to alternating p-&n- layers needed. ArF laser activation of Mg-doped GaN device was investigated. We have achieved laser activation resistivity comparable to thermally activated Mg-doped GaN, which suggest feasibility of laser activation. Our results reveal some insights on the fundamental activation mechanism of laser annealing, that is probable thermal mechanism is responsible for acceptor laser activation. Also, it is still a challenged to achieve good ohmic contact for p-GaN device.So, we also studied Indium as low temperature annealed contact& achieved low contact resistance with In/Au metal

Current Status of Research Progress
Current Status of Research Progress

3: Progress in research has been slightly delayed.

Reason

We have presented laser activation annealing of an Mg-doped GaN four-point probe small mesa device using ArF excimer laser in SPIE photonics west 2024 (international conference). And just submitted a paper in a journal.
We have also presented some results to domestic conferences and international conference within japan. We also bought the co-doped GaN wafers last year. However, the Gallium export restrictions from Chinese government result to longer delivery lead time. Currently, I am still waiting for the delivery of the co-doped wafer and continuously talking with Enkris about the possible delivery date. This delay on wafer delivery is the only reason for the slightly delayed status.

Strategy for Future Research Activity

While waiting for the co-doped wafer delivery, we are continuously improving the laser activation annealing setup. That is, different program of the programmable laser scanning stage will be investigated in preparation for the fabrication of GaN SJ device. Moreover, if the co-doped wafers will be received, we plan to immediately do laser activation on a small area device and then, scan a bigger area using laser scanning. And if possible, do fabrication of the device.

Report

(2 results)
  • 2023 Research-status Report
  • 2022 Research-status Report
  • Research Products

    (9 results)

All 2024 2023

All Journal Article (1 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 1 results) Presentation (8 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] ArF excimer laser activation of Mg-doped GaN small area mesa device2024

    • Author(s)
      M.E. Villamin, R.C. Roca, I. Kamiya & N. Iwata
    • Journal Title

      Proc. SPIE 12886, Gallium Nitride Materials and Devices XIX

      Volume: 128860 Pages: 63-63

    • DOI

      10.1117/12.3002082

    • Related Report
      2023 Research-status Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] ArF excimer laser activation of Mg-doped GaN small area mesa device2024

    • Author(s)
      M.E. Villamin & N. Iwata
    • Organizer
      SPIE Photonics West 2024
    • Related Report
      2023 Research-status Report
    • Int'l Joint Research
  • [Presentation] Annealing in Oxygen ambient of In-based contact for Mg-doped p-GaN2024

    • Author(s)
      M.E. Villamin & N. Iwata
    • Organizer
      JSAP 71st Spring Meeting
    • Related Report
      2023 Research-status Report
  • [Presentation] Formation of In/Au low-temperature contact for laser-activated pGaN2023

    • Author(s)
      M.E. Villamin & N. Iwata
    • Organizer
      14th International Conference on Nitride Semiconductors 2023
    • Related Report
      2023 Research-status Report
    • Int'l Joint Research
  • [Presentation] GaN Heterojunction rectifier diode with low turn-on voltage and high breakdown voltage for energy harvesting2023

    • Author(s)
      N. Iwata, K. Hino & M.E. Villamin
    • Organizer
      International Conference on Solid Stated Devices and Materials
    • Related Report
      2023 Research-status Report
    • Int'l Joint Research
  • [Presentation] 低オン電圧高電流特性を示す環境発電用GaN ヘテロ接合整流ダイオード2023

    • Author(s)
      K. Hino, M.E. Villamin & N. Iwata
    • Organizer
      JSAP 68th Spring Meeting
    • Related Report
      2023 Research-status Report
  • [Presentation] Annealing temperature dependence of In/Au electrode performance on p-GaN2023

    • Author(s)
      M.E. Villamin & N. Iwata,
    • Organizer
      JSAP 84th Autumn Meeting
    • Related Report
      2023 Research-status Report
  • [Presentation] N2/O2雰囲気アニールによるAu/Ni/p-GaNオーム性接触の低抵抗化2023

    • Author(s)
      N. Iwata, J. Miyake, & M.E. Villamin
    • Organizer
      電子情報通信学会2023年ソサイエティ大会
    • Related Report
      2023 Research-status Report
  • [Presentation] Comparison of Thermal and ArF Excimer Laser Activation of Mg-doped GaN2023

    • Author(s)
      Maria Emma Villamin, Naotaka Iwata
    • Organizer
      JSAP Spring Conference 2023
    • Related Report
      2022 Research-status Report

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Published: 2022-09-01   Modified: 2024-12-25  

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