| Project/Area Number |
22KF0430
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| Project/Area Number (Other) |
22F22044 (2022)
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Multi-year Fund (2023)
Single-year Grants (2022) |
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| Section | 外国 |
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| Review Section |
Basic Section 21060:Electron device and electronic equipment-related
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| Research Institution | Tohoku University |
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Principal Investigator |
唐 超 (2023) 東北大学, 学際科学フロンティア研究所, 助教 (70910991)
尾辻 泰一 (2022) 東北大学, 電気通信研究所, 教授 (40315172)
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| Co-Investigator(Kenkyū-buntansha) |
TANG CHAO 東北大学, 電気通信研究所, 外国人特別研究員
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| Project Period (FY) |
2023-03-08 – 2024-03-31
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| Project Status |
Completed (Fiscal Year 2023)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2023: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2022: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | Terahertz / Detector / Graphene / 二次元材料 / グラフェン / ヘテロ積層 / テラヘルツ / 光源 |
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| Outline of Research at the Start |
本研究は、二次元半金属と二次元半導体のヘテロ積層構造によって新原理デバイスを創出し、テラヘルツ光源としての実現性を実証することを目的とする。テラヘルツ光源を開発するため、積層二次元材料のFETを開発する。Gunnダイオードをはじめとする運動量空間キャリア遷移による電気特性で作動する発振デバイスと異なり、本研究では、実空間キャリア遷移を動作原理とする新概念デバイスの創出に挑戦する。本研究で開発するテラヘルツ光源は、複雑な光学系や成膜プロセスが不要となり、より小型化・製作簡素化できる。
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| Outline of Annual Research Achievements |
The unexplored terahertz (THz) frequency range, which lies between light waves and radio waves, has attracted the attention of numerous researchers and continues to develop. THz waves are expected to find applications in non-destructive detections, medical diagnosis, and 6G high-speed communication. On the other hand, layered compounds, including graphene, have advantages such as ultra-high mobility as well as the ability to fabricate devices by mechanical exfoliation and stacking. The purpose of this research is to create a new principle device by heterostacking two-dimensional semimetal with two-dimensional semiconductor structures, and to demonstrate its feasibility as a terahertz light source. In this research, Firstly, in a novel structure of graphene THz detector, named as single asymmetric gated graphene field effect transistor (AG-GFET), the relationship between responsivity in THz range and device parameters like channel length and dielectric layer thickness has been investigated. Secondly, the THz detection implemented with an epitaxial-graphene asymmetric dual-grating-gate field-effect transistor (EG-ADGG-GFET) has been successfully conducted, indicating the fast and high-sensitive properties of EG-ADGG-GFET devices.
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