| Project/Area Number |
23226001
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| Research Category |
Grant-in-Aid for Scientific Research (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SHIRAISHI Masashi 京都大学, 工学研究科, 教授 (30397682)
KUBOTA Hitoshi 独立行政法人産業技術総合研究所, ナノスピントロニクス研究センター, 研究チーム長 (30261605)
IMAMURA Hiroshi 独立行政法人産業技術総合研究所, ナノスピントロニクス研究センター, 研究チーム長 (30323091)
MIZUOCHI Norikazu 京都大学, 化学研究所, 教授 (00323311)
MIWA Shinji 大阪大学, 基礎工学研究科, 准教授 (20609698)
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| Co-Investigator(Renkei-kenkyūsha) |
FUKUSHIMA Akio 独立行政法人産業技術総合研究所, ナノスピントロニクス研究センター, 副研究センター長 (60357887)
YAKUSHIJI Kei 独立行政法人産業技術総合研究所, ナノスピントロニクス研究センター, 主任研究員 (10361172)
MAEHARA Hiroki 独立行政法人産業技術総合研究所, ナノスピントロニクス研究センター, 研究員 (30530828)
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| Project Period (FY) |
2011-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥187,850,000 (Direct Cost: ¥144,500,000、Indirect Cost: ¥43,350,000)
Fiscal Year 2015: ¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
Fiscal Year 2013: ¥42,250,000 (Direct Cost: ¥32,500,000、Indirect Cost: ¥9,750,000)
Fiscal Year 2012: ¥55,640,000 (Direct Cost: ¥42,800,000、Indirect Cost: ¥12,840,000)
Fiscal Year 2011: ¥62,920,000 (Direct Cost: ¥48,400,000、Indirect Cost: ¥14,520,000)
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| Keywords | スピントロニクス / 磁気共鳴 / ダイオード / スピントルク / 磁気異方性 |
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| Outline of Final Research Achievements |
Based on new concepts in “Spintronics,” new magnetic devices for RF applications have been developed. As a result, it is clarified that a current injection to an about 100 nm size magnet results in an RF auto-oscillation up to 100 GHz, and electric connection among them causes synchronization and a high RF output like 100 micro-watt. In addition, we successfully applied an STO for a phase-locked-loop (PLL) and obtained an undetectably narrow linewidth of auto-oscillation. It has been also shown that the device can be a highly sensitive magnetic field and magnetic resonance sensor. The device also shows RF rectification functions with three times better sensitivity as compared to semiconductor diode detectors. The devices are expected to find practical applications in high frequency electronics.
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| Assessment Rating |
Verification Result (Rating)
A
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Assessment Rating |
Result (Rating)
A-: Progress in the research is steadily towards the initial goal. However, further efforts are necessary as a part of the research progress is delayed.
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