| Budget Amount *help |
¥209,430,000 (Direct Cost: ¥161,100,000、Indirect Cost: ¥48,330,000)
Fiscal Year 2015: ¥23,400,000 (Direct Cost: ¥18,000,000、Indirect Cost: ¥5,400,000)
Fiscal Year 2014: ¥23,660,000 (Direct Cost: ¥18,200,000、Indirect Cost: ¥5,460,000)
Fiscal Year 2013: ¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000)
Fiscal Year 2012: ¥63,050,000 (Direct Cost: ¥48,500,000、Indirect Cost: ¥14,550,000)
Fiscal Year 2011: ¥73,580,000 (Direct Cost: ¥56,600,000、Indirect Cost: ¥16,980,000)
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| Outline of Final Research Achievements |
Silicon technology has continuously developed by utilizing statistically averaged effect of many dopants. This research project aims at developing individual dopant atom devices for ultimately miniaturized devices. As a result, in order to step forward for practical application, we have succeeded in high-temperature (room temperature) operation with help of a quantum dot formation due to a few dopants. Based on these results, dopant device technology has launched for new electronics.
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