Project/Area Number |
23310086
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Nanomaterials/Nanobioscience
|
Research Institution | NTT Basic Research Laboratories |
Principal Investigator |
OGURI Katsuya 日本電信電話株式会社NTT物性科学基礎研究所, 量子光物性研究部, 主任研究員 (10374068)
|
Co-Investigator(Kenkyū-buntansha) |
NAKANO Hidetoshi 東洋大学, 理工学部, 教授 (90393793)
HIBINO Hiroki 日本電信電話株式会社NTT 物性科学基礎研究所, 機能物質科学研究部, 部長 (60393740)
KATO Keiko 日本電信電話株式会社NTT 物性科学基礎研究所, 量子光物性研究部, 研究主任 (40455267)
SEKINE Yoshiaki 日本電信電話株式会社NTT 物性科学基礎研究所, 機能物質科学研究部, 研究主任 (70393783)
|
Project Period (FY) |
2011-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
|
Keywords | グラフェン / 超高速ダイナミクス / 時間分解光電子分光 / 表面増強ラマン散乱 / 電子位相緩和 / 高次高調波 / 時間分解ARPES / エピタキシャルグラフェン |
Research Abstract |
To clarify ultrafast relaxation dynamics in high quality and large-area graphene which is grown on a silicon carbide substarate by sublimating silicon, we have developed femtosecond time-resolved surface photoelectron spectroscopy based on a high-order harmonics source. By using this system, we clarified the surfce transport of photoexcited electron and hole on a semiconductor surface, thus showing the potential of this system for measuring ultrafast relaxation dynamics in graphene. We have also studied the surface-enhanced Raman scattering (SERS)of graphene grown on SiC by depositing Ag. The enhancement of the Raman spectrum in graphene reached more than 60. Moreover, we have successfully estimated a electron dephasing time of monolayer graphene to be approxiamtely 50 fs by using a time-resolved transient diffraction technique.
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