Study on GaN-based normally-off device on Si substrate using selective area growth
| Project/Area Number |
23360154
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
EGAWA Takashi 名古屋工業大学, 工学(系)研究科(研究院), 教授 (00232934)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥19,500,000 (Direct Cost: ¥15,000,000、Indirect Cost: ¥4,500,000)
Fiscal Year 2013: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2011: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
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| Keywords | 有機金属気相成長法 / GaN / 選択再成長 / ノーマリオフ / HEMT / MOCVD / 有機金属気相成長 / AlGaN/GaN / マイグレーション / 暗点欠陥密度 / CL / 成長速度 / 表面平坦性 |
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| Research Abstract |
GaN-based HEMTs have attractive for high power switching applications. Normally-off operation was one of major requirements for AlGaN/GaN HEMTs. However, realization of normally-off operation with high drain cuurent is difficult due to the existence of two-dimensional electron gas in heterointerface induced piezo and spontaneous polarization charges. Selective area growth (SAG) technique is one of solutions for normally-off operation.
In this study, I report normally-off AlGaN/GaN HEMTs with SAG of an AlGaN layer and deposition of an Al2O3 film on an AlGaN/GaN heterostructure designed to be completely depleted. Adopting AlGaN regrowth in a selective area and Al2O3 film deposition for the access region of the HEMT, the normall-off operation of AlGaN/GaN HEMT was demonstrated. The device showed the drain current density of 160 mA/mm and the threshold voltgae of 0.4 V.
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Report
(4 results)
Research Products
(41 results)
