Development of Stark modulator using ZnO/ZnMgO quantum wells
| Project/Area Number |
23560010
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tottori University |
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Principal Investigator |
ABE Tomoki 鳥取大学, 工学(系)研究科(研究院), 准教授 (20294340)
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| Co-Investigator(Kenkyū-buntansha) |
ANDO Koshi 鳥取大学, 工学研究科, 教授 (60263480)
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| Project Period (FY) |
2011 – 2013
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 量子閉じ込めシュタルク効果 / ZnO/ZnMgO量子井戸 / 透過型光変調器 / シュタルクシフト / 紫外光変調器 / MBE成長 |
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| Research Abstract |
We have studied quantum confined Stark effect (QCSE) of ZnO/ZnMgO quantum wells. The optical modulator devices are grown on sapphire substrate and we used PEDOT:PSS film as Schotky transparent film formed by ink-jet method. We obtained good crystal quality by using very thin 3nm MgO buffer on c-plane sapphire, and by using this buffer technique we obtained 20meV reverse Stark shift in UV region by applying a reverse voltage of 7V.
Secondly we have studied about low voltage operation posibility of optical modulator using ZnO/ZnMgO quantum wells. We used electro-chemical electrode as a Schotky contact to ZnO surface, and we obtained 20meV reverse Stark shift by small reverse bias of 2V.
These results shows that ZnO/ZnMgO quantum wells have a good potential for UV optical modulator.
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Report
(4 results)
Research Products
(35 results)
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[Journal Article] Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE2014
Author(s)
T. Masamoto, K. Noda, T. Maejima, R. Natsume, T. Matsuo, A. Akiyama, T. Yukue, S. Hiroe, T. Abe, H. Kasada, Y. Harada and K. Ando
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Journal Title
phys. stat. sol. (c)
Volume: (published on line)
Related Report
Peer Reviewed
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[Journal Article] Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE2014
Author(s)
T. Masamoto, K. Noda, T. Maejima, R. Natsume, T. Matsuo, A. Akiyama, T. Yukue, S. Hiroe, T. Abe, H. Kasada, Y. Harada andK. Ando
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Journal Title
physica status solidi (c)
Volume: Published online 2 April 2014
Issue: 7-8
Pages: 1353-1356
DOI
Related Report
Peer Reviewed
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[Presentation] MBE法により成長した高抵抗p型ZnO : N薄膜の精密評価～N2(O)を起源とするdouble donorの検証～2014
Author(s)
野田佳佑,政本卓也,木寺亮太,松尾拓郎,廣江伸哉,秋山彰雅,行衛孝明,奥山彰浩,阿部友紀,笠田洋文,安東孝止
Organizer
第61回応用物理学会春季学術講演会
Place of Presentation
青山学院大学
Related Report
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[Presentation] Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE2013
Author(s)
T. Masamoto, K. Noda, T. Maejima, R. Natsume, T. Matsuo, A. Akiyama, T. Yukue, S. Hiroe, T. Abe, H. Kasada, Y. Harada and K. Ando
Organizer
The 16th International Conference on II-VI Compounds and Related Materials
Place of Presentation
Nagahama Japan
Year and Date
2013-09-10
Related Report
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[Presentation] RS-MBE法を用いたホモエピタキシャル成長NドープZnO薄膜のp型伝導制御～NO+O2混合ガスによる成長～2013
Author(s)
廣江伸哉,松尾拓郎,木寺亮太,秋山彰雅,行衛孝明,政本卓也,野田佳佑,阿部友紀,笠田洋文,安東孝止,奥山彰浩
Organizer
第74回応用物理学会秋季学術講演会
Place of Presentation
同志社大学
Related Report
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[Presentation] Fermi-level pinning by carrier com- pensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE2013
Author(s)
T. Masamoto, K. Noda, T. Maejima, R. Natsume, T. Matsuo, A. Akiyama, T. Yukue, S. Hiroe, T. Abe, H. Kasada, Y. Harada andK. Ando
Organizer
The 16th International Conference on II-VI Compund and Related Materials
Place of Presentation
Nagahama Royal Hotel, Nagahama, Japan
Related Report
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[Presentation] MBE成長したN doped ZnO薄膜の精密評価～高抵抗ZnO : Nの挙動～2012
Author(s)
政本卓也,前島隆之,野田佳佑,加藤晃司,夏目龍,松尾拓朗,廣江伸哉,秋山章雅,行衛孝明,阿部友紀,笠田洋文,安東孝止
Organizer
第73回応用物理学会秋季学術講演会
Place of Presentation
愛媛大学
Related Report
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[Presentation] RS-MBE法を用いたホモエピタキシャル成長NドープZnO薄膜のp型伝導制御～ポストアニール効果によるNの活性化～2011
Author(s)
夏目龍,加藤晃司,高崎正欣,松尾拓朗,秋山章雅,前島隆之,政本卓也,原田宣明,阿部友紀,笠田洋文,安東孝止
Organizer
第72回応用物理学会秋季学術講演会
Place of Presentation
山形大学
Year and Date
2011-08-31
Related Report
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[Presentation] ZnOホモエピタキシャル成長薄膜中のNアクセプタの構造不安定性～局所格子歪とp型伝導制御の影響～2011
Author(s)
前島隆之,加藤晃司,高崎正欣,夏目龍,政本卓也,松尾拓朗,秋山章雅,原田宜明,阿部友紀,笠田洋文,安東孝止
Organizer
第72回応用物理学会秋季学術講演会
Place of Presentation
山形大学
Year and Date
2011-08-31
Related Report
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[Presentation] Local-strain induced structural-instability of nitrogen acceptor and its influence on p-type conduction-control in homo-epitaxially grown ZnO by MBE2011
Author(s)
T. Maejima, K. Ando, K. Katoh, M. Takazaki, R. Natsume, T. Masamoto, T. Matsuo, A. Akiyama, T. Ohno, K. Fujino, H. Nakamura, Y. Yamazaki, J. Yoshikawa, T. Abe, and H. Kasada
Organizer
The 15th International Conference on II-VI Compounds
Place of Presentation
Mayan Riviera, Mexico
Year and Date
2011-08-25
Related Report
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