Charge separation of photo-excited electric charge carriers and its interaction with internal electric filed induced by crystalline polarity
Project/Area Number |
23651081
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Research Category |
Grant-in-Aid for Challenging Exploratory Research
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Allocation Type | Multi-year Fund |
Research Field |
Environmental technology/Environmental materials
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Research Institution | National Institute for Materials Science |
Principal Investigator |
OHASHI Naoki 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 部門長 (60251617)
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Co-Investigator(Renkei-kenkyūsha) |
HANEDA Hajime 独立行政法人物質・材料研究機構, 企画部門, 部門長 (70354420)
SAKAGUCHI Isao 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主幹研究員 (20343866)
ADACHI Yutaka 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員 (30354418)
HISHITA Shunichi 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, グループリーダー (40354419)
OHGAKI Takeshi 独立行政法人物質・材料研究機構, 環境・エネルギー材料部門, 主任研究員 (80408731)
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Project Period (FY) |
2011 – 2012
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Project Status |
Completed (Fiscal Year 2012)
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Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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Keywords | 酸化物半導体 / 極性表面 / 電子状態 / 極性結晶 / 自発分極 / 光電子分光 |
Research Abstract |
Characterization of surface electronic structure of oxide crystal was investigated by means of x-ray photoelectron spectroscopy. The surface of specimen was well polished to obtain damage free surface by chemical mechanical polishing using colloidal silica nano-particles. As a result, we obtained the trace of specific electronic states originated in the polarity of crystal and identification of the electronic states by using density functional theory calculation has been done. Deposition of polarity controlled crystals was also demonstrated.
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Report
(3 results)
Research Products
(22 results)
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[Journal Article] Polarity-dependent photoemission spectra of wurtzite-type zinc oxide2012
Author(s)
J. Williams, H. Yoshikawa, S. Ueda, Y. Yamashita, K. Kobayashi, Y. Adachi, H. Haneda, T. Oogaki, H. Miyazaki, Takamasa Ishigaki, N. Ohash
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Journal Title
Appl. Phys. Lett
Volume: 100
Issue: 5
Pages: 51902-51902
DOI
Related Report
Peer Reviewed
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[Presentation] NIMS連携拠点2012
Author(s)
大橋直樹
Organizer
東工大元素戦略シンポジウム
Place of Presentation
東京工業大学 すずかけ台キャンパス,横浜市,日本
Year and Date
2012-10-01
Related Report
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[Presentation] Defects and charge compensation in wide bandgap semiconductors2012
Author(s)
OHASHI Naoki, SAKAGUCHI Isao, WATANABE Ken, ADACHI Yutaka, TAKESHI OGAKI, HISHITA Shunichi, MIYAZAKI Hiroki, Jesse Willia, ISHIGAKI Takamasa
Organizer
Solid State Chemistry 2012 (Invited)
Place of Presentation
University of Pardubice, Pardubice,チェコ
Related Report
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[Presentation] ウルツ鉱型半導体薄膜の極性判定とその制御2011
Author(s)
大橋直樹, Jesse Williams, 安達裕, 吉川英樹, 山下良之, 上田茂典, 大垣武, 坂口勲, 菱田俊一, 小林啓介
Organizer
日本金属学会2011年度秋期講演大会
Place of Presentation
沖縄コンベンションセンターおよびカルチャーリゾートフェストーネ,宜野湾
Related Report
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