Light-element semiconductors
| Project/Area Number |
23654077
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
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| Research Institution | The University of Tokyo |
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Principal Investigator |
LIPPMAA Mikk 東京大学, 物性研究所, 准教授 (10334343)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 粒子測定技術 / 軽元素の半導体 |
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| Research Abstract |
The growth of BeO and BeZnO thin films by pulsed laser deposition was studied. A stability diagram was constructed for the growth of crystalline BeO films. It was discovered that it is possible to grow crystalline films even at room temperature. The available alloying limits were determined for both Zn- and Be-rich BeZnO semiconductor films. X-ray dosimetry function was evaluated in Be-doped ZnO films.
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Report
(3 results)
Research Products
(4 results)
