| Budget Amount *help |
¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
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| Research Abstract |
Recently the transparent flexible semiconductors that can be fabricated into a form of ultra-thin films are a target material for the development of low energy-consuming devices. Although little attention has been paid to a class of inorganic layered compounds, they are a promising candidate particularly when they are exfoliated to individual nanosheets. In the present work, a normally-on FET was fabricated by contacting two regions on a glass substrate: the one side was a cast film of perovskite-type niobate as n-type photosemiconductor and the other a cast film of synthetic saponite as an insulator. The current-voltage (I-V) characteristics were obtained under the illumination of light (340 nm). This is the first FET device based on clay minerals.
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