Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy
| Project/Area Number |
23656015
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya University |
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Principal Investigator |
AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAGUCHI Mashito 名古屋大学, 工学研究科, 准教授 (20273261)
HONDA Yoshio 名古屋大学, 工学研究科, 助教 (60362274)
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| Project Period (FY) |
2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
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| Keywords | PAMBE / InGaN / 窒素ラジカル / LED / 太陽電池 / PA MBE / 超格子 / ナノワイヤ / 内部量子効率 |
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| Research Abstract |
Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.
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Report
(2 results)
Research Products
(2 results)
