| Project/Area Number |
23656208
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 結晶成長 / エピタキシャル / 格子欠陥 / 電子・電気材料 / 半導体物性 / ゲルマニウム / シリコン / シリコンフォトニクス / MBE、エピタキシャル |
|---|
| Research Abstract |
A method to decrease the dislocation density in Ge grown on Si substrate was examined. Introducing a tensile lattice strain at the Si surface with a stressor of patterned SiN_x film, the lattice mismatch between Ge and Si was reduced, leading to a possible decrease of the dislocation density in Ge. Using a double layer mask of a SiO_2 layer on the SiN_x stressor, a perfect selective growth of Ge was realized on the exposed region of Si surface, although the threading dislocation density was10^9 cm^-2, being similar to those for the growth with SiO_2 masks.
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