Technology of Formation of Ge Flat Film Directly on Si by P SurfactantEffect and Sputter Epitaxy Method

• Project/Area Number: 23656210
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo University of Agriculture and Technology
• Principal Investigator: SUDA Yoshiyuki 東京農工大学, 大学院・工学研究院, 教授 (10226582)
• Project Period (FY): 2011 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000); Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 作成 / 評価技術 / Ge / 仮想基板 / エピタキシー / SK成長 / ゲルマニウム / サファクタント / ヘテロ成長 / Ｇｅ成長 / 歪 / 平坦化 / 緩和 / 表面泳動 / 島状成長 / 90度転位

Research Abstract

We have systematically analyzed the method of formation of a Ge flat film deposited directly on heavily P-doped Si by our developed sputter epitaxy and have cleared the flat Ge growth mechanisms where the Ge layer is grown flat with generation of 90° dislocations at a Si/Ge interface and a small strain in the film. The dislocations are probably generated due to the short Ge adsorbate migration length and presence of doped P atoms. We have also found a similar Ge growth behavior on a heavily B-doped Si, and our proposed method is expected to be well used as a Ge virtual substrate.

Research Products

• [Journal Article] Ge Flat Layer Growth on Heavily Phos- phorus-Doped Si (001) by Sputter Epitaxy (2012)
  • Author(s): Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51
  • Peer Reviewed
• [Journal Article] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices (2012)
  • Author(s): Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa and Manabu Kanazawa
  • Journal Title: Procedia Engineering Volume: 36 Pages: 396-403
  • Peer Reviewed
• [Journal Article] Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy (2012)
  • Author(s): Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Yoshiyuki Suda
  • Journal Title: Japanese Journal of Applied Physics Volume: 51 Issue: 5R Pages: 055502-055502
  • DOI: 10.1143/jjap.51.055502
  • NAID: 210000140614
  • Peer Reviewed
• [Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method, Abs (2013)
  • Author(s): Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
  • Organizer: 8th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Kyushu University, Fukuoka
• [Presentation] スパッタエピタキシー法を用いたGe薄膜形成におけるボロンドープSi基板の効果 (2013)
  • Author(s): 塚本貴広,広瀬信光,笠松章史,三村高志,松井敏明,須田良幸
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学,厚木
• [Presentation] Nobumitsu Hirose, Takashi Mimura*, and Toshiaki Matsui, SiGe Processes and Devices Using Sputter Epitaxy Method, Abs (2013)
  • Author(s): Yoshiyuki Suda, Takahiro Tsukamoto, Akifumi Kasamatsu
  • Organizer: 6th Int. Workshop New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Tohoku University, Miyagi
• [Presentation] SiGe Processes and Devices Using Sputter Epitaxy Method (2013)
  • Author(s): Yoshiyuki Suda, Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, and Toshiaki Matsui
  • Organizer: 6th Int. Workshop New Group IV Semiconductor Nanoelectronics
  • Place of Presentation: Tohoku University, Miyagi
  • Invited
• [Presentation] Effect of Boron Dopant of Si (001) Substrates on Growth of Ge Layers using Sputter Epitaxy Method (2013)
  • Author(s): Takahiro Tsukamoto, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui and Yoshiyuki Suda
  • Organizer: 8th International Conference on Silicon Epitaxy and Heterostructures
  • Place of Presentation: Kyushu University, Fukuoka
• [Presentation] スパッタエピタキシー法を用いたGe薄膜形成におけるボロンドープSi基板の効果 (2013)
  • Author(s): 塚本貴広、広瀬信光、笠松章史、三村高志、松井敏明、須田良幸
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川県、神奈川工科大学
• [Presentation] Phosphorus Mediated Growth of Ge Layer on Si (001) Substrate (2011)
  • Author(s): Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi, Kasamatsu, Takashi Mimura, Toshiaki Matsui, Harold M. H. Chong, Hiroshi Mizuta, and Yoshiyuki Suda
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya
  • Year and Date: 2011-09-30
• [Presentation] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices, Int (2011)
  • Author(s): Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa and Manabu Kanazawa
  • Organizer: Union of Materials Research Soc
  • Place of Presentation: Taipei, Taiwan
  • Year and Date: 2011-09-11
• [Presentation] スパッタエピタキシー法で形成したGe薄膜の平坦化機構 (2011)
  • Author(s): 花房宏明,広瀬信光,笠松章史,三村高志,松井敏明,須田良幸
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学,山形
  • Year and Date: 2011-08-31
• [Presentation] Phosphorus Mediated Growth of Ge Layer on Si(001) Substrate (2011)
  • Author(s): Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, Harold M. H. Chong, Hiroshi Mizuta, and Yoshiyuki Suda
  • Organizer: 2011 International Conference on Solid State Devices and Materials
  • Place of Presentation: Aichi Industry & Labor Center, Nagoya, Aichi
• [Presentation] SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices (2011)
  • Author(s): Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa, Manabu Kanazawa
  • Organizer: International Union of Materials Research Society(招待講演)
  • Place of Presentation: Taipei World Trade Center Nangang Exhibition Hall, Ｔａｉｐｅｉ, Taiwan
• [Presentation] スパッタエピタキシー法で形成したGe薄膜の平坦化機構 (2011)
  • Author(s): 花房宏明、 広瀬信光、笠松章史、三村高志、松井敏明、 須田良幸
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形県 山形大学
• [Remarks]
  • URL: http://www.tuat.ac.jp/~boss
• [Remarks]
  • URL: http://www.tuat.ac.jp/~boss/