Sulfide semiconductors for solar cells based on natural resources
Project/Area Number |
23760005
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Multi-year Fund |
Research Field |
Applied materials science/Crystal engineering
|
Research Institution | Gunma University |
Principal Investigator |
GOTOH Tamihiro 群馬大学, 理工学研究院, 准教授 (10311523)
|
Project Period (FY) |
2011 – 2013
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
|
Keywords | 硫化物半導体 / 硫化すず / バンドギャップ / 光吸収係数 / 太陽電池材料 / 硫化プロセス / ゼーベック係数 / ギャップ内準位 / 半導体薄膜 / 硫化 |
Research Abstract |
Optical and electrical properties of sulfide semiconductor films for solar cells absorber were investigated. Tin sulfide (SnS) films exhibit optical bandgap of 1.30-1.36 eV for indirect or nondirect transitions, Urbach energy of 0.12-0.14 eV and mid-gap absorption at 0.5-1.2 eV. The mid-gap absorption was reduced to less than 2 % of as-deposited films by thermal annealing up to 400C. These results indicate that heat-induced structural change causes the reduction of gap-states in SnS films.
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Report
(4 results)
Research Products
(35 results)