| Project/Area Number |
23760012
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
KATO Masashi 名古屋工業大学, 工学研究科, 准教授 (80362317)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2012: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2011: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 半導体 / 結晶評価 / デバイス作製プロセス / 4H-SiC / キャリアライフタイム / 深い準位 / 電子線照射 / 点欠陥 |
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| Research Abstract |
In this work, we introduced defects in 4H-SiC samples, and then observed deep levels and carrier lifetimes in the samples. The results show that deep levels were introduced in n-type samples by 2 MeV electron irradiation, and the deep levels would originate from carbon-antisite-vacancy related defects. Surface recombination does not significantly effect on the carrier lifetime. On the other hand, p-type samples irradiated with 160 keV electrons show deep levels from carbon-related complex defects and the deep levels possibly act as a recombination center.
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