| Project/Area Number |
23760285
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
ITAGAKI Naho 九州大学, システム情報科学研究院, 准教授 (60579100)
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| Project Period (FY) |
2011 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 薄膜・量子構造 / エキシトニクス / 酸窒化物半導体 / エキシトニックトランジスタ / ピエゾ電界 / スパッタリング / 量子井戸 / 酸化物半導体 / 結晶成長 |
|---|
| Research Abstract |
Excitonic transistor has attracted much attention because of its potential advantages such as high operation and interconnection speed, small dimensions, and low per consumption. The major challenges for excitonic devices are to increase the operating temperature. Here we have developed a novel semiconductor based on oxynitride and a novel device structure that uses piezoelectric field with the aim to obtain room-temperature operating excitonic devices.
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