| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2013: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Research Abstract |
We have generated an ohmic GaAs/Si bonded interface for the first time. This optically transparent, electrically conductive heterointerface can be applied for the creation of various novel high-performance compound semiconductor/silicon hybrid optoelectronic devices. By using the GaAs/Si bonding technique, we have successfully fabricated an AlGaAs/Si two-terminal dual-junction solar cell, the first bonded compound semiconductor/silicon hybrid multijunction solar cell. The fabricated dual-junction cell exhibits a high preliminary efficiency of 25% under a 1 sun (100 mW/cm2) illumination, demonstrating the validity of our bonding scheme for the realization of ultrahigh-efficiency lattice-mismatched multijunction solar cells.
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