|Budget Amount *help
¥218,140,000 (Direct Cost: ¥167,800,000、Indirect Cost: ¥50,340,000)
Fiscal Year 2016: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2015: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
Fiscal Year 2014: ¥38,220,000 (Direct Cost: ¥29,400,000、Indirect Cost: ¥8,820,000)
Fiscal Year 2013: ¥65,520,000 (Direct Cost: ¥50,400,000、Indirect Cost: ¥15,120,000)
Fiscal Year 2012: ¥81,900,000 (Direct Cost: ¥63,000,000、Indirect Cost: ¥18,900,000)
|Outline of Final Research Achievements
L10 structure MnAl thin film with large magnetic anisotropy, small magnetic relaxation constant and good flatness was succeeded in producing. A CoFeMnSi Heusler alloy exhibiting high spin polarizability and small magnetic relaxation constant could be fabricated on an amorphous SiO2 substrate. By inserting an ultra-thin Pd thin film on the L10 - FePd electrode and optimizing the deposition temperature, it was possible to fabricate a tunnel insulating layer epitaxially grown. We succeeded to fabricate ultra-thin and high quality Bi ferrite thin film on LaSrMnO3 ferromagnetic layer.
Since the heterojunction using the ordered alloy as described above exceeds the performance of the conventional spin device and shows various physical phenomena, it leads to the creation of a completely new spin device.