Flexible electronics on mica substrates
Project/Area Number |
24245040
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Inorganic industrial materials
|
Research Institution | The University of Tokyo |
Principal Investigator |
|
Project Period (FY) |
2012-05-31 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000)
Fiscal Year 2014: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2013: ¥13,130,000 (Direct Cost: ¥10,100,000、Indirect Cost: ¥3,030,000)
Fiscal Year 2012: ¥14,690,000 (Direct Cost: ¥11,300,000、Indirect Cost: ¥3,390,000)
|
Keywords | 雲母 / 窒化物半導体 / フレキシブルエレクトロニクス / GaN / スパッタ |
Outline of Final Research Achievements |
We have investigated the feasibility of fabricating flexible GaN-based light emitting diodes (LEDs) on mica substrates. The polarity control of the GaN films on mica substrates has been demonstrated with and without the AlN buffer layers. It has been found that it is possible to grow n- and p-type GaN films and to form a multiple quantum wells on mica substrates. We fabricated GaN-based LEDs and confirmed their successful operation. These results indicate that the present technique is quite promising as a future fabrication method for large-area and flexible GaN light-emitting displays.
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Report
(4 results)
Research Products
(50 results)