Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
Project/Area Number |
24246010
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | The Institute of Physical and Chemical Research |
Principal Investigator |
HIRAYAMA Hideki 独立行政法人理化学研究所, 平山量子光素子研究室, 主任研究員 (70270593)
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Co-Investigator(Kenkyū-buntansha) |
FUJIKAWA Sachie 理化学研究所, 平山量子光素子研究室, 研究員 (90550327)
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Project Period (FY) |
2012-04-01 – 2015-03-31
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Project Status |
Completed (Fiscal Year 2014)
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Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2013: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
Fiscal Year 2012: ¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000)
|
Keywords | 深紫外LED / AlGaN / AlN / MOCVD / Si基板 / 縦型LED / 光取りだし効率 / 内部量子効率 / 光取り出し効率 / 貫通転位密度 |
Outline of Final Research Achievements |
The development of high-power deep-ultraviolet light-emitting diodes (DUV-LEDs) is quite an important subject because they are required for a wide variety of applications, such as sterilization, water purification, medicine and biochemistry. However, high-power operation of a DUV-LED fabricated on a sapphire substrate is difficult because of a large series resistance due to a lateral-injection and a low light-extraction efficiency (LEE). The purpose of this work is to realize a high-power DUV-LED by fabricating a vertical-type large-area LED device on a silicon (Si) substrate. We demonstrated high-quality AlN buffer layers with no surface cracks by fabricating them on patterned Si substrates. We obtained milli-watt power operations of DUV-LEDs fabricating on the high-quality AlN layer grown on the patterned substrates. We also achieved significant increase of LEE of DUV LED by introducing a transparent p-type AlGaN contact layer and a highly-reflective electrode.
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Report
(4 results)
Research Products
(89 results)
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[Presentation] High-quality AlN template for deep-UV LED grown on patterned sapphire substrate formed by using nano-imprinting and wet-chemical etching2014
Author(s)
Y. Kanazawa, S. Toyoda, N. Maeda, M. Jo, N. Kamata, Y. Kashima, E. Matsuura, S. Shimatani, M. Kokubo, T. Tashiro, T. Ohkawa, R. Kamimura, Y. Osada and H. Hirayama
Organizer
The 10th International Symposium on Semiconductors Light Emitting Devices (ISSLED2014)
Place of Presentation
Kaohsiung, Taiwan
Year and Date
2014-12-14 – 2014-12-19
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