| Budget Amount *help |
¥20,020,000 (Direct Cost: ¥15,400,000、Indirect Cost: ¥4,620,000)
Fiscal Year 2015: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2012: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
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| Outline of Final Research Achievements |
Based on GaN nanowall crystal, we aimed to develop ultrafine GaN nanostructures approaching the limit of artificial fabrication limit (< 50 nm in width), and application technology for optoelectronic devices. We have developed a low-damage GaN etching technique of hydrogen environment anisotropic thermal etching (HEATE), fabricated InGaN/GaN nanowalls and nanopillars with lateral dimension of 30 nm, demonstrated room temperature current injection blue-color emission from InGaN/GaN nano-LEDs, and realized GaN nanopillars with smallest diameter of 10 nm. The research goal have been achieved.
We also obtained unplanned results of the high performance transparent conductive film with a high average transmittance of 88.2% (315-780 nm) and low sheet resistance of 7.6 ohm/sq., and development of a solution based deposition technique named "nano-mist deposition (NMD)" for functional thin films.
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