Nonvolatile memory devices with metallo-supramolecular polymers
| Project/Area Number |
24350097
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Functional materials/Devices
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Higuchi Masayoshi 国立研究開発法人物質・材料研究機構, 先端的共通技術部門, グループリーダー (80306852)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2014: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2013: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2012: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Keywords | メタロ超分子ポリマー / 不揮発性メモリ / 整流特性 / メモリデバイス |
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| Outline of Final Research Achievements |
This research project was at first planned for three fiscal years from 2012 to 2014, but extended for one more fiscal year (2015), because we have found unique rectification properties in nonvolatile memory devices with metallo-supramolecular polymers. As the result, we have achieved to control the direction of current flow in the device by perpendicular alignment of metallo-supramolecular polymers, which are composed of asymmetrical organic modules and Pt(II) ions (ACS Appl. Mater. Interfaces, 2015, 7, 19034-19042).
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Report
(5 results)
Research Products
(12 results)
