Preparation of low dislocation density and deep-UV transparent AlN substrates by hydride vapor phase epitaxy
Project/Area Number |
24360006
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Tokyo University of Agriculture and Technology |
Principal Investigator |
KUMAGAI Yoshinao 東京農工大学, 工学(系)研究科(研究院), 教授 (20313306)
|
Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Hisashi 東京農工大学, 大学院工学研究院, 准教授 (90401455)
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Research Collaborator |
SITAR Zlatko North Carolina State University, Department of Materials Science and Engineering, Professor
NAGASHIMA Toru 株式会社トクヤマ, 筑波研究所, 主任
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2014: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2013: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2012: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
|
Keywords | 窒化アルミニウム / 転位密度 / 深紫外光透過性 / HVPE法 / 不純物 / 深紫外線LED / MOVPE法 / 昇華法 / 深紫外発光ダイオード |
Outline of Final Research Achievements |
Homo-epitaxial growth of thick AlN layers by hydride vapor phase epitaxy (HVPE) was investigated on low dislocation density (< 1000 /cm2) AlN wafers prepared by physical vapor transport (PVT). AlN wafers prepared from HVPE layers had high structural quality identical to that of the PVT-AlN wafers and deep-UV transparency with an optical cutoff at 206.5 nm. The development of deep-UV transparency was found to be related to lower concentration of carbon impurity in the HVPE-AlN wafers. Strong electroluminescence (EL) peaking at 268 nm from deep-UV LEDs fabricated by metal-organic chemical vapor deposition (MOCVD) on the HVPE-AlN wafers could be extracted through the HVPE-AlN wafers.
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Report
(4 results)
Research Products
(51 results)
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[Journal Article] The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN2014
Author(s)
B. E. Gaddy, Z. Bryan, I. Bryan, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Kirste, Z. Sitar, R. Collazo, and D. L. Irving
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Journal Title
Applied Physics Letters
Volume: 104
Pages: 202106-1-4
DOI
Related Report
Peer Reviewed
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[Journal Article] Vacancy compensation and related donor-acceptor pair recombination in bulk AlN2013
Author(s)
B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo, and D. L. Irving
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Journal Title
Applied Physics Letters
Volume: 103
Pages: 161901-1-5
DOI
Related Report
Peer Reviewed
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[Journal Article] On the origin of the 265 nm absorption band in AIN bulk crystals2012
Author(s)
R, Collazo, J, Xie, B, E, Gaddy, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving, and Z, Sitar
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Journal Title
Applied Physics Letters
Volume: 100
Pages: 191914 1-5
DOI
Related Report
Peer Reviewed
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[Journal Article] Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport2012
Author(s)
Y, Kumagai, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, A, Koukitu, and Z, Sitar
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Journal Title
Applied Physics Express
Volume: 5
Pages: 055504 1-3
DOI
Related Report
Peer Reviewed
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[Journal Article] Structural and Optical Properties of Carbon-Doped AIN Substrates Grown by Hydride Vapor Phase Epitaxy Using AIN Substrates Prepared by Physical Vapor Transport2012
Author(s)
T, Nagashima, Y, Kubota, T, Kinoshita, Y, Kumagai, J.Xie, R, Collazo, H, Murakami, H, Okamoto, A, Koukitu, and Z, Sitar
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Journal Title
Applied Physics Express
Volume: 5
Pages: 125501 1-3
DOI
Related Report
Peer Reviewed
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[Journal Article] Deep-Ultraviolet Light-Emitting Diodes Fabricated on AIN Substrates Prepared by Hydride Vapor Phase Epitaxy2012
Author(s)
T, Kinoshita, K, Hironaka, T, Obata, T, Nagashima, R, Dalmau, R, Schlesser, B, Moody, J, Xie, S, Inoue, Y, Kumagai, A, Koukitu, and Z, Sitar
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Journal Title
Applied Physics Express
Volume: 5
Pages: 122101 1-3
DOI
Related Report
Peer Reviewed
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[Presentation] High-purity and highly-transparent AlN bulk crystal growth for UVC LED application by HVPE2015
Author(s)
Y. Kumagai, T. Nagashima, T. Kinoshita, R. Togashi, R. Yamamoto, B. Moody, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
Organizer
2015 Photonics West
Place of Presentation
The Moscone Center, San Francisco, California, U.S.A.
Year and Date
2015-02-09
Related Report
Invited
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[Presentation] Predicted Properties of Point Defects and Complexes in AlN and AlGaN2014
Author(s)
B. E. Gaddy, Z. Bryan, I. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
Organizer
2014 MRS Fall Meeting and Exhibit
Place of Presentation
Hynes Convention Center, Boston, Massachusetts, U.S.A.
Year and Date
2014-12-04
Related Report
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[Presentation] Characterizing The Role of Point Defects and Complexes in UV Absorption and Emission in AlN2014
Author(s)
B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, R. Collazo, Z. Sitar and D. L. Irving
Organizer
International Workshop on Nitride Semiconductors 2014
Place of Presentation
Centennial Hall, Wroclaw, Poland
Year and Date
2014-08-27
Related Report
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[Presentation] Growth of AlN by Hydride Vapor Phase Epitaxy2014
Author(s)
Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
Organizer
International Workshop on Nitride Semiconductors 2014
Place of Presentation
Centennial Hall, Wroclaw, Poland
Year and Date
2014-08-26
Related Report
Invited
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[Presentation] Growth of Si-Doped AlN Layers by Hydride Vapor Phase Epitaxy2014
Author(s)
R. Tanaka, S. Tojo, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
Organizer
International Workshop on Nitride Semiconductors 2014
Place of Presentation
Centennial Hall, Wroclaw, Poland
Year and Date
2014-08-26
Related Report
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[Presentation] Investigation of Ambient Gas after High-Temperature Growth of AlN by Hydride Vapor Phase Epitaxy2014
Author(s)
S. Tojo, R. Tanaka, T. Nukaga, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, Y. Kumagai, A. Koukitu and Z. Sitar
Organizer
International Workshop on Nitride Semiconductors 2014
Place of Presentation
Centennial Hall, Wroclaw, Poland
Year and Date
2014-08-26
Related Report
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[Presentation] MOCVD growth of AlGaN alloy for DUV-LEDs2014
Author(s)
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, S. Inoue, Y. Kumagai, A. Koukitu, R. Collazo, and Z. Sitar
Organizer
17th International Conference on Metalorganic Vapor Phase Epitaxy
Place of Presentation
EPFL, Lausanne, Switzerland
Year and Date
2014-07-15
Related Report
Invited
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[Presentation] Deep UV-LEDs Fabricated of on HVPE-AlN Substrates2014
Author(s)
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
Organizer
5th International Symposium on Growth of III-Nitrides
Place of Presentation
The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
Year and Date
2014-05-21
Related Report
Invited
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[Presentation] Hydride Vapor Phase Epitaxy and Doping of AlN2014
Author(s)
Y. Kumagai, T. Nagashima, T. Kinoshita, B. Moody, R. Togashi, H. Murakami, R. Collazo, A. Koukitu and Z. Sitar
Organizer
5th International Symposium on Growth of III-Nitrides
Place of Presentation
The Westin Peachtree Plaza, Atlanta, Georgia, U.S.A.
Year and Date
2014-05-19
Related Report
Invited
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[Presentation] Deep ultraviolet light-emitting diodes fabricated on AIN substrates prepared by hydride vapor phase epitaxy2013
Author(s)
T, Kinoshita, K, Hironaka, T, Obata, T, Nagashima, R, F, Dalmau, R, Schlesser, B, Moody, J, Xie, S, Inoue, Y, Kumagai, A, Koukitu, Z, Sitar
Organizer
2013 Photonics West
Place of Presentation
The Moscone Center, San Francisco (米国)
Year and Date
2013-02-06
Related Report
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[Presentation] Hetero- and Homo-Epitaxy of Thick AIN Layers by Hydride Vapor Phase Epitaxy2012
Author(s)
Y, Kumagai, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, A, Koukitu, Z, Sitar
Organizer
2012 Collaborative Conference on Crystal Growth
Place of Presentation
Doubletree by Hilton Orlandoat SeaWorld (米国)(招待講演)
Year and Date
2012-12-12
Related Report
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[Presentation] HVPE法による深紫外光透過性を有する高品質AINウェーハーの作製2012
Author(s)
坂巻鮨之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
Organizer
第42回結晶成長国内会議
Place of Presentation
九州大学筑紫キャンパス
Year and Date
2012-11-09
Related Report
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[Presentation] On the origin of the 265 nm absorption band in AIN bulk crystals2012
Author(s)
R, Collazo, J, Xie, B, E, Gaddy, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving, Z, Sitar
Organizer
International Workshop on Nitride Semiconductors 2012
Place of Presentation
札幌コンベンションセンター
Year and Date
2012-10-18
Related Report
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[Presentation] Optical and structural properties of intentionally C-doped thick HVPE AIN layers grown on PVT AIN substrates2012
Author(s)
T, Nagashima, Y, Kubota, T, Kinoshita, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y, Kumagai, A, Koukitu, Z, Sitar
Organizer
International Workshop on Nitride Semiconductors 2012
Place of Presentation
札幌コンベンションセンター
Year and Date
2012-10-18
Related Report
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[Presentation] Prediction of point defect behavior in nitrides using hybrid exchange DFT: Applications to the deep-UV absorption band in AIN2012
Author(s)
Z, Sitar, B, E, Gaddy, R, Collazo, J, Xie, Z, Biyan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, D, L, Irving
Organizer
International Workshop on Nitride Semiconductors 2012
Place of Presentation
札幌コンベンションセンター
Year and Date
2012-10-16
Related Report
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[Presentation] Homoepitaxial growth of thick AIN layers by HYPE on bulk AIN substrates prepared by PVT2012
Author(s)
R, Sakamaki, Y, Kubota, T, Nagashima, T, Kinoshita, R, Dalmau, R, Schlesser, B, Moody, J, Xie, H, Murakami, Y、Kumagai, A, Koukitu, Z, Sitar
Organizer
International Workshop on Nitride Semiconductors 2012
Place of Presentation
札幌コンベンションセンター
Year and Date
2012-10-15
Related Report
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[Presentation] Predictive Calculations of Defect Properties using Hybrid Exchange DFT: Applications to Optically Active Impurities in AIN2012
Author(s)
B, E, Gaddy, R, Collazo, J, Xie, Z, Bryan, R, Kirste, M, Hoffmann, R, Dalmau, B, Moody, Y, Kumagai, T, Nagashima, Y, Kubota, T, Kinoshita, A, Koukitu, Z, Sitar, D, L, Irving
Organizer
International Workshop on Nitride Semiconductors 2012
Place of Presentation
札幌コンベンションセンター
Year and Date
2012-10-15
Related Report
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[Presentation] バルクPVT基板上HVPE成長によるAIN自立基板の作製2012
Author(s)
坂巻龍之介, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
Organizer
第73回応用物理学会学術講演会
Place of Presentation
松山大学文京キャンパス
Year and Date
2012-09-13
Related Report
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[Presentation] HVPE成長フリースタンディングAIN基板の異方性を考慮した分光エリプソメトリー評価2012
Author(s)
岡本浩, 佐藤崇信, 堤浩一, 鈴木道夫, 熊谷義直, 久保田有紀, 永島徹, 木下亨, R, Dalmau, R, Schlesser, B, Moody, J, Xie, 村上尚, 纐纈明伯, Z, Sitar
Organizer
第73回応用物理学会学術講演会
Place of Presentation
松山大学文京キャンパス
Year and Date
2012-09-13
Related Report
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[Presentation] PVT基板上に成長したCドープHVPE法AIN厚膜の光学特性と構造特性2012
Author(s)
永島徹, 久保田有紀, 木下亨, R, Schlesser, B, Moody, J, Xie, 村上尚, 熊谷義直, 纐纈明伯, Z, Sitar
Organizer
第73回応用物理学会学術講演会
Place of Presentation
松山大学文京キャンパス
Year and Date
2012-09-13
Related Report
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[Presentation] Deep-UV Transparent AlN Substrates Prepared by HVPE for UV-C LED Applications
Author(s)
T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Organizer
Conference on LED and Its Industrial Application '13
Place of Presentation
パシフィコ横浜
Related Report
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[Presentation] Fabrication of DUV-LEDs on AlN Substrates
Author(s)
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, and Z. Sitar
Organizer
Conference on LED and Its Industrial Application '13
Place of Presentation
パシフィコ横浜
Related Report
Invited
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[Presentation] DUV-LEDs Fabricated on HVPE-AlN Substrates
Author(s)
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, J. Xie, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu and Z. Sitar
Organizer
10th International Conference on Nitride Semiconductors
Place of Presentation
Washington, D.C., U.S.A.
Related Report
Invited
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[Presentation] Donor-Acceptor Pair Compensation and the Broad 2.8 eV Luminescence in Bulk AlN
Author(s)
B. E. Gaddy, Z. A. Bryan, I. S. Bryan, R. Kirste, J. Xie, R. Dalmau, B. Moody, Y. Kumagai, T. Nagashima, Y. Kubota, T. Kinoshita, A. Koukitu, Z. Sitar, R. Collazo and D. L. Irving
Organizer
10th International Conference on Nitride Semiconductors
Place of Presentation
Washington, D.C., U.S.A.
Related Report
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[Presentation] Influence of Growth Temperature on Homo-Epitaxial Growth of AlN by HVPE on PVT-AlN Substrates
Author(s)
T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu and Z. Sitar
Organizer
10th International Conference on Nitride Semiconductors
Place of Presentation
Washington, D.C., U.S.A.
Related Report
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[Presentation] Vacancy Defects in UV-Transparent HVPE-AlN
Author(s)
T. Kuittinen, F. Tuomisto, Y. Kumagai, T. Nagashima, T. Kinoshita, A. Koukitu, R. Collazo and Z. Sitar
Organizer
10th International Conference on Nitride Semiconductors
Place of Presentation
Washington, D.C., U.S.A.
Related Report
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[Presentation] Growth of high quality AlN with deep-UV transparency by HVPE
Author(s)
T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, and Z. Sitar
Organizer
2013 JSAP-MRS Joint Symposia
Place of Presentation
同志社大学京田辺キャンパス
Related Report
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[Presentation] Influence of growth parameters on homo-epitaxial growth of thick AlN layers by HVPE on PVT-AlN substrates
Author(s)
Y. Kumagai, T. Nukaga, R. Sakamaki, Y. Kubota, T. Nagashima, T. Kinoshita, B. Moody, J. Xie, H. Murakami, A. Koukitu, Z. Sitar
Organizer
8th International Workshop on Bulk Nitride Semiconductors
Place of Presentation
Seeon, Germany
Related Report
Invited
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[Presentation] Properties of homoepitaxial AlN layers grown by HVPE on PVT-AlN substrates
Author(s)
T. Nagashima, Y. Kubota, R. Okayama, T. Kinoshita, B. Moody, J. Xie, H. Murakami, Y. Kumagai, A. Koukitu, R. Collazo, Z. Sitar
Organizer
8th International Workshop on Bulk Nitride Semiconductors
Place of Presentation
Seeon, Germany
Related Report
Invited
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[Presentation] Performance of DUV-LEDs fabricated on HVPE-AlN substrates
Author(s)
T. Kinoshita, T. Obata, T. Nagashima, H. Yanagi, B. Moody, R. Collazo, S. Inoue, Y. Kumagai, A. Koukitu, Z. Sitar
Organizer
2014 Photonics West
Place of Presentation
San Francisco, U.S.A.
Related Report
Invited
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