Coherent growth of high-quality group-III nitirides on SiC substrates and its device applications

• Project/Area Number: 24360009
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Kyoto University
• Principal Investigator: Suda Jun 京都大学, 工学(系)研究科(研究院), 准教授 (00293887)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000); Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000); Fiscal Year 2014: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000); Fiscal Year 2013: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000); Fiscal Year 2012: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
• Keywords: 窒化アルミニウム / 炭化珪素 / 分子線エピタキシー / 結晶成長 / 転位 / 超格子 / III族窒化物 / 炭化硅素 / コヒーレント / デバイス / 格子欠陥 / ヘテロ構造

Outline of Final Research Achievements

Coherent Growth of high-Al-content AlGaN on SiC substrates aiming at device applications were investigated. As high-Al-content AlGaN, AlN/GaN short-period superlattices were grown. Various kinds of AlN/GaN Superlattices were grown to assess critical composition as well as critical thickness for coherent growth on SiC substrates. Superlattices with GaN mole fraction of 20% were successfully growth coherently. On the other hand, it was found that growth of 3-bilayer-thick GaN results in lattice relaxation. The relaxation was gradual. By using this nature, strain-controlled AlN were grown on SiC substrates via ultra-thin GaN/AlN multilayer structures.

Research Products

• [Journal Article] Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy (2016)
  • Author(s): Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
  • Journal Title: Applied Physics Express Volume: 9 Issue: 2 Pages: 025502-025502
  • DOI: 10.7567/apex.9.025502
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Strain control in AlN top layer by inserting an ultrathin GaN interlayer on an AlN template coherently grown on SiC(0001) by PAMBE (2016)
  • Author(s): Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
  • Journal Title: Physica Status Solidi B Volume: - Issue: 5 Pages: 814-818
  • DOI: 10.1002/pssb.201552649
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface steps (2014)
  • Author(s): H. Okumura, T. Kimoto and J. Suda
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 7 Pages: 071603-071603
  • DOI: 10.1063/1.4892807
  • NAID: 120005669315
  • Peer Reviewed
• [Journal Article] Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy (2013)
  • Author(s): M. Kaneko, R. Kikuchi, H. Okumura, T. Kimoto and J. Suda
  • Journal Title: JAPANESE JOURNAL OF APPLIED PHYSICS Volume: 52 Issue: 8S Pages: 08JE21-08JE21
  • DOI: 10.7567/jjap.52.08je21
  • NAID: 210000142665
  • Peer Reviewed
• [Journal Article] AlGaN/SiC heterojunction bipolar transistors featuring AlN/GaN short-period superlattice emitter (2013)
  • Author(s): H. Miyake, T. Kimoto and J. Suda
  • Journal Title: IEEE Transactions on Electron Devices Volume: 60 Issue: 9 Pages: 2768-2775
  • DOI: 10.1109/ted.2013.2273499
  • Peer Reviewed
• [Journal Article] Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001) (2013)
  • Author(s): M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
  • Journal Title: Applied Physics Express Volume: 6 Issue: 6 Pages: 62604-62604
  • DOI: 10.7567/apex.6.062604
  • NAID: 10031181971
  • Peer Reviewed
• [Journal Article] Over-700 nm criical thickness of AIN grown on 6H-SiC(0001)by molecular beam epitaxy (2012)
  • Author(s): H.Okumura, T. Kimoto and J. Suda
  • Journal Title: Aplied Physics Express Volume: 5 Issue: 5 Pages: 051002-051002
  • DOI: 10.1143/apex.5.051002
  • Peer Reviewed
• [Presentation] ステップ高さ制御SiC基板上AlN層の高分解能X線回折評価における界面局在ミスフィット転位に起因する横方向サテライトピーク (2016)
  • Author(s): 金子光顕、木本恒暢、須田淳
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学
  • Year and Date: 2016-03-20
• [Presentation] Observation of lateral satellite peaks in nitride semiconductor: HRXRD study of AlN layer grown on step-height-controlled SiC substrate (2015)
  • Author(s): Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
  • Organizer: International Symposium on Growth of Nitride Semiconductors(ISGN-6)
  • Place of Presentation: Act City Hamamatsu
  • Year and Date: 2015-11-10
  • Int'l Joint Research
• [Presentation] マクロステップバンチングが起こる条件でガスエッチングしたSiC表面のマクロテラス上に並んだ1 unit cell高さステップの発生機構 (2015)
  • Author(s): 平井和斗、金子光顕、木本恒暢、須田淳
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-15
• [Presentation] SiC基板上にPAMBE成長したAlN層の成長初期III/V比による貫通転位発生メカニズムの考察 (2015)
  • Author(s): 金子光顕、木本恒暢、須田淳
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-14
  • Invited
• [Presentation] Strain controls in AlN layer by ultra-thin GaN interlayer grown on high-quality AlN template coherently grown on SiC(0001) by PAMBE (2015)
  • Author(s): Mitsuaki Kaneko, Tsunenobu Kimoto, and Jun Suda
  • Organizer: International Conference on Nitride Semiconductors
  • Place of Presentation: Beijing International conference center
  • Year and Date: 2015-09-03
  • Int'l Joint Research
• [Presentation] SiC基板上AlN成長層の貫通転位低減における成長初期V/III比の重要性 (2015)
  • Author(s): 金子光顕、木本恒暢、須田淳
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] 4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC (1120) (2014)
  • Author(s): 堀田昌宏、登尾正人、木本恒暢、須田淳
  • Organizer: 第14回「関西コロキアム電子デバイスワークショップ」
  • Place of Presentation: 大阪工業大学 うめきたナレッジセンター
  • Year and Date: 2014-11-17
  • Invited
• [Presentation] PAMBE法によるAlN/GaN多層構造における極薄GaN層の成長制御性に関する検討 (2014)
  • Author(s): 金子光顕、木本恒暢、須田淳
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] SiC(0001)基板上に成長した大きな圧縮歪みを内包するAlN薄膜の光学特性および格子振動数評価 (2014)
  • Author(s): 金子光顕、奥村宏典、石井良太、船戸充、川上養一、木本恒暢、須田淳
  • Organizer: 第33回電子材料シンポジウム
  • Place of Presentation: ラフォーレ修善寺
  • Year and Date: 2014-07-09 – 2014-07-11
• [Presentation] 水素ガスエッチングを施した4H-SiC極性面および無極性面基板の表面形状 (2014)
  • Author(s): 東孝洋，金子光顕，木本恒暢，須田淳
  • Organizer: 応用物理学会
  • Place of Presentation: 青山学院大学
• [Presentation] Large Shifts of Free Excitonic Transition Energies and (0001) due to Strong In-Plane Compressive Strain (2013)
  • Author(s): M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
  • Organizer: International Workshop on Nitride Semiconductors
  • Place of Presentation: Washington, USA
• [Presentation] Structural and Optical Characterization of 2H-AlN Coherently-Grown on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy (2013)
  • Author(s): M. Kaneko, H. Okumura, R. Ishii, M. Funato, Y. Kawakami, T. Kimoto and J. Suda
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学
• [Presentation] High-Al-content AlGaN Digital Alloy with GaN Mole-fraction Up t0 20% Coherently - Grown on 6H-SiC (0001) (2012)
  • Author(s): M. Kaneko, R. Kikuchi, H. Okumura T. Kimoto and J. Suda
  • Organizer: nternat ional Workshop on Nitride Semiconductors 201
  • Place of Presentation: Sapporo
  • Year and Date: 2012-10-17