Fabrication of nanowire-based light emitting nanodevices
Project/Area Number |
24360114
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Hokkaido University |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
SASAKURA Hirotaka 北海道大学, 創成研究機構, 特任助教 (90374595)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2012: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
|
Keywords | 半導体ナノワイヤ / 有機金属気相選択成長 / 発光ダイオード / レーザ / 量子ドット / 光共振器 / ナノワイヤ / 光取り出し効率 / 励起子スピン緩和 |
Outline of Final Research Achievements |
To realize nanowire-based light-emitting devices, we grew III-V semiconductor nanowires by selective-area metalorganic vapor-epitaxy (SA-MOVPE) and carried out characterization of their optical properties. Main results are summarized as follows. (1) The far-field emission pattern of nanowire-based light-emitting diode was investigated experimentally and theoretically. Peculiar emission patterns for nanowires were clrarified. (2) Density-controled InP nanowire arrays were realized by SA-MOVPE. The InAsP quantum dots (QDs) were embedded in the low-density InP nanowire arrays, and emission from a single QD in a single nanowire was confirmed. (3) Mode structure of the nanowire-based optical cavity was investigated by numerical simulation and its design principle was established. GaAs/InGaAs/GaAs core-multishell heterostructure nanowires were grown following the established design and cavity mode resonance was clearly identified by temperature-dependent photoluminescence study.
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Report
(4 results)
Research Products
(14 results)