INTEGRATION OF FERROMAGNETIC SINGLE-ELECTRON TRANSISTORS USING ELECTROMIGRATION METHODS
| Project/Area Number |
24360117
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2012: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
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| Keywords | 少数電子素子 / スピンエレクトロニクス / エレクトロマイグレーション / マイクロ・ナノデバイス / ナノギャップ / ナノ材料 / 単電子トランジスタ / 磁性 |
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| Outline of Final Research Achievements |
We present a simple technique for simultaneous control of the electrical properties of multiple Ni nanogaps. This technique is based on electromigration induced by a field emission current and is called "activation". Simultaneous tuning of the tunnel resistance of multiple nanogaps was achieved by passing a Fowler-Nordheim (F-N) field emission current through an initial group of Ni nanogaps connected in series. Furthermore, Ni-based single-electron transistors (SETs) operating at room temperature were successfully fabricated and integrated using activation method. These results clearly imply that electromigration procedure allows us to easily and simply integrate Ni-based SETs.
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Report
(4 results)
Research Products
(25 results)
