| Budget Amount *help |
¥18,200,000 (Direct Cost: ¥14,000,000、Indirect Cost: ¥4,200,000)
Fiscal Year 2014: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2013: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Outline of Final Research Achievements |
Objective of this research is to develop a new variable capacitance element, using oxide conductors and ferroelectric or high-dielectric constant materials which can induce large charge density. Such a large charge density enables us to switch on and off the oxide conducting thin film by the gate voltage, which leads to variable-area electrode and variable capacitance. In this project, at first, fabrication conditions of ferroelectric (Bi,La)4Ti3O12 (BLT) film were optimized and new high-dielectric constant materials were searched by solution process. Next, thin film transistor structure was fabricated using ITO or In2O3 channel to realize variable capacitance elements. It is confirmed that the source-gate capacitance can be changed by the gate voltage with a capacitance ratio of 1500%. Switching properties were also characterized. In addition, scaling down the device size was achieved using nanoimprint technology.
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