Fabrication of vertical strained-Ge MOSFETs by channel-last process and the electrical characterization
| Project/Area Number |
24360120
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Osaka University |
|---|
Principal Investigator |
SHIMURA Takayoshi 大阪大学, 工学(系)研究科(研究院), 准教授 (90252600)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
WATABABE Heiji 大阪大学, 大学院工学研究科, 教授 (90379115)
HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
|
|---|
| Project Period (FY) |
2012-04-01 – 2015-03-31
|
| Project Status |
Completed (Fiscal Year 2014)
|
| Budget Amount *help |
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2012: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
|
|---|
| Keywords | 電気・電子材料 / 作成・評価技術 / エピタキシャル成長 / 半導体 / ゲルマニウム / 格子歪み |
|---|
| Outline of Final Research Achievements |
We have fabricated Ge wires by liquid-phase epitaxy during rapid thermal annealing. The field effect transistors with the Ge wires exhibited high on/off current ratio under the accumulation mode. Moreover, effective hole mobility of 500 cm2/Vs was obtained, which was almost 1.6 times higher than the reference Si device. Direct band gap shrinkage was also investigated by means of photoluminescence spectroscopy. We observed a significant redshift of direct gap emission amounting to 45 meV for the Ge wire, which was mainly due to a tensile strain of approximately 0.4% induced by rapid crystallization from the Ge melting point.
|
Report
(4 results)
Research Products
(26 results)
