Elucidation and control of nanoionics phenomena at oxide/metal heterointerfaces
| Project/Area Number |
24360278
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Tsuruoka Tohru 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主幹研究員 (20271992)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2014: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2013: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥9,880,000 (Direct Cost: ¥7,600,000、Indirect Cost: ¥2,280,000)
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| Keywords | 酸化物 / カチオン伝導 / 酸化還元反応 / ナノイオニクス / 量子化コンダクタンス / シナプス動作 / 抵抗変化メモリ / 原子スイッチ / 吸湿挙動 / アモルファス酸化物 / 金属イオン伝導 / 抵抗変化メモリー / ヘテロ界面 |
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| Outline of Final Research Achievements |
We have investigated the switching mechanism and functionalities of Cu,Ag/Ta2O5/Pt atomic switch-type resistance change memories based on the transport of metal ions in oxide thin films and electrochemical reactions at metal/oxide interfaces, which are called ‘nanoionics phenomena’. We performed real-space observation of a conducting filament formed in the memory by atomic force and transmission electron microscopies, elucidation of detailed redox reaction at metal/oxide interfaces and moisture absorption effects of oxides by electrochemical methods, and demonstration of conductance quantization and synaptic behavior.
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Report
(5 results)
Research Products
(42 results)
