A study on room-temperature atomic layer deposition by using radical-enhanced surface-stimulation techniques
Project/Area Number |
24510147
|
Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Nanomaterials/Nanobioscience
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Research Institution | Yamagata University |
Principal Investigator |
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Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2013: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
|
Keywords | 原子層堆積 / 励起 / 金属酸化膜 / 吸着 / 酸化 / 室温 / 酸化物 / 飽和吸着 / コーティング / ゲート絶縁膜 / 原子層堆積法 / 酸化膜 / プラズマ / 国際情報交換 |
Outline of Final Research Achievements |
To realize next-generation semiconductor devices with an atomic scale, we developed room-temperature (RT) atomic layer deposition of HfO2, TiO2 and Al2O3 that might allow the minimum thermal budget in the LSI fabrication. In the course of the research, we directly observed fundamental reactions of source gas adsorption and oxidation. It was found that metal organic precursors of TEMAH, TDMAT and TMA are possible to adsorb on the hydroxylated oxide surfaces even at RT, whereas the plasma excited water and oxygen is effective in oxidizing the precursor saturated surface with the OH termination. The reaction models of the RT ALD were proposed in this study.
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Report
(4 results)
Research Products
(22 results)