Transport properties and defect kinetics during silicon thin film growth
Project/Area Number |
24540546
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Plasma science
|
Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
NUNOMURA Shota 独立行政法人産業技術総合研究所, 太陽光発電工学研究センター, 主任研究員 (50415725)
|
Co-Investigator(Renkei-kenkyūsha) |
SAKATA Isao 産業技術総合研究所, 太陽光発電工学研究センター (60357100)
|
Project Period (FY) |
2012-04-01 – 2015-03-31
|
Project Status |
Completed (Fiscal Year 2014)
|
Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
|
Keywords | プラズマ / 半導体 / 太陽電池 / 欠陥 / プラズマCVD / アモルファスシリコン / 光電流 / キャリア輸送 / トラップ / PECVD / 半導体薄膜 / その場測定 / 実時間観測 / プラズマプロセス / トラップキャリア |
Outline of Final Research Achievements |
We have developed an in-situ characterization technique for the carrier transport and defects in semiconductor films during plasma processing. By applying this technique to hydrogenated amorphous silicon under growth by plasma enhanced CVD, we find that the defect-rich surface layer of <20nm is formed and the bulk layer is grown underneath it. During postgrowth annealing, the defect-rich surface layer is reorganized and the carrier transport is improved by one order of magnitude.
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Report
(4 results)
Research Products
(20 results)