| Budget Amount *help |
¥5,330,000 (Direct Cost: ¥4,100,000、Indirect Cost: ¥1,230,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
Purpose of this research work was to observe a partial metal-insulator transition induced by an external gate electric field in field effect transistor structure using strongly-correlated organic crystals. Crystal growth, fabrication methods of electrodes, and device structure were entirely reconsidered throughout this research work. As a secondary result, sticking electrodes were produced during this research period. This technique will be useful for other works using various organic single devices. We have finally succeeded in demonstrating the field induced partial metal-insulator transition. Field effect characteristics of the device were reproducible and varied from p-type to ambipolar by changing the contact electrodes. The observed phenomena corresponded to a lower side shift of the metal-insulator transition temperature.
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