Control of Fermi level pinning at surfaces and interfaces of InAlN
| Project/Area Number |
24560022
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Hokkaido University |
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Principal Investigator |
AKAZAWA Masamichi 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 (30212400)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
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| Keywords | InAlN / 表面 / 界面 / 界面準位 / ピンニング / Al2O3 / 窒化インジウムアルミニウム / 窒化物混晶 / フェルミ準位ピンニング / MIS構造 / 表面不活性化 / 界面制御 |
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| Outline of Final Research Achievements |
Fermi level pinning at the surface, insulator/semiconductor interface, and metal/semiconductor interface has been investigated for InAlN lattice matched to GaN. Pinning at the InAlN surface was found to be removed by an appropriate insulator deposition. The interface state density at the insulator/InAlN interface was found to be dependent on the interface formation process and post deposition annealing. An original method to form an Al2O3/InAlN interface with a low interface state density was developed. For the metal/InAlN interface, strong dependence of the Schottky barrier height on the metal work function was seen.
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Report
(4 results)
Research Products
(25 results)
