| Budget Amount *help |
¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Outline of Final Research Achievements |
A simulation code based on a microscopic model for ion-solid interactions was developed for secondary electron (SE) emission of samples impacted by an ion beam. The code can calculate emission characteristics such as the SE yield and the emission energy and angle of SEs. The characteristics showed better spatial resolution and clearer material, topographic and voltage contrasts in helium ion microscope (HIM), compared with scanning electron microscope and gallium ion microscope.
Realistic sample surfaces, such as a 100 nm-high trench-structured Si surface and 10-100 nm thick SiO2 films on Si were irradiated with He ion beams to make SE profiles. The comparisons with the observation images and calculated profiles revealed the formation mechanisms of edge and charging contrasts in HIM. Channeling contrast of crystalline sample images were modeled by molecular dynamics. Sample damages by the ion irradiation were simulated by using a dynamic Monte Carlo simulation code.
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