| Project/Area Number |
24560031
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Yokohama City University |
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Principal Investigator |
SHIGETA YUKICHI 横浜市立大学, 生命ナノシステム科学研究科, 教授 (70106293)
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| Co-Investigator(Kenkyū-buntansha) |
TOSAKA Aki 横浜市立大学, 大学院生命ナノシステム科学研究科, 助教 (20436166)
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| Research Collaborator |
ISHII Takuya
NAKATA Junya
YOSHIDA Ryuuma
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2013: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2012: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 薄膜成長 / インターミキシング / 歪み半導体 / 走査トンネル顕微鏡 / 角度分解光電子分光 / 表面伝導バンド |
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| Outline of Final Research Achievements |
The influence of strain on the intermixing in the hetero-epitaxial growth is very important in the developing of new materials. We have get two important results about it: (1) In the hetero-epitaxial growth of Si layer on the Ge(111) surface annealed at 450℃, the intermixing of Ge atoms in the Si layer is observed at the thickness over 2 bilayer; (2) In the solid phase epitaxial growth of the Ge/Si(111), we propose a decision rule whether the Ge and Si atoms are mixed or not from the change of the surface morphology after the solid phase epitaxial growth.
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