Preparation of high-resolution radiation detector by the control of CdTe-metal interface states
| Project/Area Number |
24560061
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied physics, general
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| Research Institution | University of the Ryukyus |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2014: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | テルル化カドミウム / 表面処理 / 放射線検出素子 / ショットキーダイオード / 金属半導体界面 |
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| Outline of Final Research Achievements |
We have investigated the effects of plasma and sulfur treatments on the properties of Schottky-type CdTe radiation detector. In this research, various metals (Mg, Ti, Al, Ni) were used as the electrodes of CdTe diodes, and the barrier heights of them were estimated. In spite of different work functions of metals, the Schottky barrier heights showed almost same values. This result strongly suggests the Fermi level is pinned by the interface states. The surface states of plasma treated and the sulfur treated CdTe were estimated by the conductive-AFM. The surface was uniformly covered by the relatively high resistivity layer after sulfur treatment, while that of plasma treated sample was covered by low-resistivity particles and high-resistivity grain boundaries. We succeeded in the preparation of high-stability radiation detector by the sulfur treatment. These results suggests that the properties of interface layer between electrode and CdTe affects the quality of radiation detection.
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Report
(4 results)
Research Products
(4 results)
