Dynamic Supply Current Test Method with Built-in IDDT Appearance Time Sensor
| Project/Area Number |
24650021
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Computer system/Network
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| Research Institution | The University of Tokushima |
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Principal Investigator |
HASHIZUME Masaki 徳島大学, ソシオテクノサイエンス研究部, 教授 (40164777)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2013: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 断線 / 電流テスト / IC / IDDTテスト / 電流センサ回路 / 遅延故障 / CMOS / 動的電源電流 / 動的電源電圧変動 / 短絡 / CMOS IC |
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| Research Abstract |
A built-in test circuit is proposed to detect an open defect in a CMOS IC by means of appearance time of dynamic supply current of the IC. Also, a test method based on the dynamic supply current with on the test circuit is proposed. A layout of an IC embedding the test circuit has been designed and an IC has been prototyped. It is shown by Spice simulation and some experiments that an open defect in the IC can be detected by the test method.
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Report
(3 results)
Research Products
(8 results)
