Realization of quantum well structure in bulk thermoelectric semiconductor by control of the formation of stacking fault in SiC
| Project/Area Number |
24686078
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Structural/Functional materials
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| Research Institution | Nagoya University |
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Principal Investigator |
HARADA Shunta 名古屋大学, グリーンモビリティ連携研究センター, 助教 (30612460)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
Fiscal Year 2014: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2013: ¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2012: ¥13,260,000 (Direct Cost: ¥10,200,000、Indirect Cost: ¥3,060,000)
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| Keywords | 格子欠陥 / 量子井戸構造 / 熱電変換 / シリコンカーバイト / 熱電変換材料 / 積層欠陥 / 量子井戸 / 量子細線 / 部分転位分解 / 低次元電気伝導 |
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| Outline of Final Research Achievements |
Thermoelectric materials which convert heat energy to electric energy attract great attention due to the efficient use of limited energy sources. Recently, Drastic improvement in the thermoelectric properties were expected by the quantum well structures. In the present study, by controlling the stacking fault formation in SiC crystal, we attempted to form the quantum well structure in the bulk semiconductors.
By the addition of nitrogen in SiC, cubic-type stacking faults are introduced to the hexagonal SiC crystal. The stacking fault would be quantum-well because the band-gap energy of cubic SiC is smaller than that of hexagonal SiC.
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Report
(4 results)
Research Products
(28 results)
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[Presentation] Dislocation conversion during SiC solution growth for high-quality crystal2014
Author(s)
S. Harada, Y. Yamamoto, S. Xiao, N. Hara, D. Koike, T. Mutoh, M. Tagawa, T. Sakai, T. Ujihara
Organizer
10th European Conference on Silicon Carbide and Related Materials(ECSCRM 2014)
Place of Presentation
The congress center of the World Trade Center, Grenoble, France
Year and Date
2014-09-23
Related Report
Invited
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