| Project/Area Number |
24760031
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Toyota Technological Institute (2013)
Waseda University (2012) |
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Principal Investigator |
KAMIOKA Takefumi 豊田工業大学, 工学(系)研究科(研究院), 研究員 (00434332)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | シリコン / ニッケル / 走査型トンネル顕微鏡 / イオン銃 / シリサイド / 欠陥 / 核形成 / イオン注入 / 表面・界面物性 / プラズマ / 結晶欠陥 |
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| Research Abstract |
In this project, the interaction of low-energy metal ions with silicon (Si) crystalline surface was investigated in atomistic scale. In-situ real-time observation of Si surfaces modified with nickel (Ni) ions was performed by using our original ion gun and scanning tunneling microscopy (IG/STM) combined system. The snapshots of Ni ion irradiation process onto Si(111) surfaces revealed the initial formation processes of Ni silicide; Ni silicide selectively nucleates not only at the step edges, but also the peripheries of vacancy clusters formed by the ion irradiation. This indicates a strong interaction between Ni atoms and vacancy-type defects. We also demonstrated for the first time in-situ observation of the shadowing effect during ion irradiation on a wire-patterned Si surface. The STM images clearly showed the boundary between the irradiated and the unirradiated region formed by the wire-structure. This new method can be applied to monitor roughness evolution in atomistic scale.
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