| Project/Area Number |
24760032
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
SANG Liwen 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 (90598038)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 薄膜 / solar cell / Si / InGaN / 太陽電池 / 異種材料 |
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| Research Abstract |
P-Si/InGaN heterojunction structures are proposed to fabricate solar cells to achieve both the current match and overcome the difficulty of p-type doping in In-rich InGaN. This structure can extend the optical absorption to the full solar spectrum by adjusting the In composition in InGaN and/or doping in the p-Si. We have successfully deposit amorphous Si on p-type InGaN by PECVD deposition to fabricate heterojunctions. The heterojunction indicated very good characteristics, showing the p-n junction behavior. The photovoltaic properties are achieved. InGaN quantum dots structures are also successfully achieved to realize long-wavelength absorption.
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