Developing of laser cutting and simultaneous removing of heat affected layer method of silicon, sapphile and SiC
| Project/Area Number |
24760100
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Shinshu University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 特殊加工 / 加工変質層 / レーザ加工 / 複合加工 / シリコン / 炭化ケイ素 |
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| Research Abstract |
Laser grooving was performed in this study, aiming for its application to semiconductor-die cutting. Analysis of grooves formed on silicon revealed that processing in liquid etchants is more effective for reducing the heat affected layer on the grooves than processing in air or pure water. Besides, using a high-repetition-rate and low-peak-power laser, lower groove width was achieved than a low-repetition-rate and high-peak-power laser; however, excess repetition-rate caused unintended etching around the grooves. Though, such unintended etching could be suppressed by circulating the liquid etchant. In addition to above facts about silicon, it is found that 4H-SiC can be removed effectively by processing in liquid containing strong oxidant.
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Report
(3 results)
Research Products
(14 results)
