Amorphous/Crystalline Hybrid Silicon Photonic Integrated Circuits
| Project/Area Number |
24760271
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kanazawa University |
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Principal Investigator |
MARUYAMA Takeo 金沢大学, 電子情報学系, 准教授 (60345379)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2012: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 光集積回路 / 光検出器 / 光導波路 / シリコンフォトニクス / 光電子集積回路 / 超高速光検出器 |
|---|
| Research Abstract |
We propose the 0.8 um range silicon photonic integrated circuits for a next generation network and a compact photonic receiver. In optical interconnection, 0.8 um wavelength region vertical-cavity surface-emitting lasers (VCSELs) and Si photodiodes (PDs) are used for realizing low cost systems. Si avalanche PDs (APDs) was fabricated by the complementary metal-oxide-semiconductor process are expected for optical interconnection applications due to easy integration with trans-impedance amplifiers (TIA) and the following electronic circuits.
The bandwidth of APDs was increased with decreasing the detection area and decreasing the electrode PAD size because of decreased depletion capacitance at pn junctions and the PAD capacitance. The maximum bandwidth of 9 GHz was obtained. We fabricated multi-mode Ta2O5 waveguides by a CF4 reactive ion etching process. The propagation loss of 1 dB/cm was obtained at 830nm,
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Report
(3 results)
Research Products
(87 results)
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[Presentation] FMCW光距離センサの距離測定精度の検討2014
Author(s)
木村洋介,五十嵐彬宏, Nguyen Van Tu, Nor Azlinah,丸山武男,飯山宏一
Organizer
2014年電子情報通信学会総合大会
Place of Presentation
新潟(C-3-28)
Year and Date
2014-03-20
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